Kukovitsky, Ð.F. and L`vov, S.G. and Osin, Yu.N. and Shustov, V.Ð. (2009) High âmission Current Density Carbon Nanotube Field âmitters: Synthesis and âmission Characteristics. Journal of NANO and MICROSYSTEM TECHNIQUE (10).
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Official URL: http:// www.microsystems.ru
Abstract
Carbon nanotube layers on silicon substrates with nickel silicide NiSi2 interface layer were produced by chemical vapor deposition (CVD). According to the X-ray-diffraction analysis the silicide forms epitaxial film on silicon surface. Field emission characteristics of such layers with area 7-10-4 cm2 were measured in superhigh vacuum 10-9 Torr. Volt -ampere characteristics corresponds to Fowler-Nordheim theory with field enhancement factor beta = 780. The value of emission current density is 900 mA/cm2. Such density keeps during 60 min work with relative current fluctuation value 0,1 %. Keywords: carbon nanotubes, silicon substrates, nickel silicides, field emission.
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10190 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:39 |
| Last Modified: | 09 Dec 2010 09:29 |
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