Polyakov, V.V. (2009) Stray Capacitance Compensation Technique in Scanning Capacitance Microscopy. Journal of NANO and MICROSYSTEM TECHNIQUE (9).
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http:// www.microsystems.ru
Abstract
Specially designed probe and novel stray capacitance compensation technique for 2D dopant profiles characterization of semiconductor structures by scanning capacitance microscopy (SCM) have been advanced. CorÂresponding unit for SCM realization has been engineered. Advantages of using compensation technique and high (10â20 nm) spatial resolution of SCM are demonstrated on samples with dopant concentration in the range 1015â1020 cm-3. Keywords: SCM, capacitance microscopy, SPM, AFM, probe microscopy, dopant profile.
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10188 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:39 |
| Last Modified: | 09 Dec 2010 09:29 |
Repository Staff Only: item control page
