Aleksandrov, P.A. and Demakov, K.D. and Kuznetsov, Yu.Yu. and Shemardov, S.G. (2009) Improvement of Silicon-on-Sapphire Structures by Hydrogen Implantation and Subsequent Annealing. Journal of NANO and MICROSYSTEM TECHNIQUE (9).
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Silicon films on sapphire with a low defect concentration have been produced using hydrogen implantation and subsequent thermal treatment. The method of X-ray rocking curves indicated that the full-width-at-half-maxi-mum (FWHM) decreased by 40 %. Keywords: implantation, silicon on sapphire, high-temperature annealing.
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:39|
|Last Modified:||09 Dec 2010 09:29|
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