Aleksandrov, P.A. and Demakov, K.D. and Kuznetsov, Yu.Yu. and Shemardov, S.G. (2009) Improvement of Silicon-on-Sapphire Structures by Hydrogen Implantation and Subsequent Annealing. Journal of NANO and MICROSYSTEM TECHNIQUE (9).
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Abstract
Silicon films on sapphire with a low defect concentration have been produced using hydrogen implantation and subsequent thermal treatment. The method of X-ray rocking curves indicated that the full-width-at-half-maxi-mum (FWHM) decreased by 40 %. Keywords: implantation, silicon on sapphire, high-temperature annealing.
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10182 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:39 |
| Last Modified: | 09 Dec 2010 09:29 |
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